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M45价格
参考价格：￥4.8623
型号：M4500 品牌：Heyco 备注：这里有M45多少钱，2025年最近7天走势，今日出价，今日竞价，M45批发/采购报价，M45行情走势销售排行榜，M45报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M45 | 包装：盒 描述：DOUBLE BALANCED MIXER - ULTRA BR RF/IF，射频/中频和 RFID 射频混频器 | ETC 知名厂家 | ETC |   |
145026 COMPATIBLE 3 STATE 19,683 CODES FEATURES •39differencecodes. •Minimum2transmissionwords. •Totallypincompatiblewith145026. •S.O.Package─suffix-S. APPLICATION •Securityalarm,Remotecontrol. | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
145026 COMPATIBLE 3 STATE 19,683 CODES FEATURES功能敘述 ‧39differencecodes. ‧Minimum2transmissionwords. ‧Totallypincompatiblewith145026. ‧S.O.Package─suffix-S. APPLICATION產品應用 ‧Securityalarm,Remotecontrol.防盜系統,任何遙控裝置. | MOSDESIGNMOSDESIGN SEMICONDUCTOR CORP 一华一华半导体股份有限公司 |  | | |
145026 COMPATIBLE 3 STATE 19,683 CODES FEATURES功能敘述 ‧39differencecodes. ‧Minimum2transmissionwords. ‧Totallypincompatiblewith145026. ‧S.O.Package─suffix-S. APPLICATION產品應用 ‧Securityalarm,Remotecontrol.防盜系統,任何遙控裝置. | MOSDESIGNMOSDESIGN SEMICONDUCTOR CORP 一华一华半导体股份有限公司 | | | |
145026 COMPATIBLE 3 STATE 19,683 CODES FEATURES功能敘述 ‧39differencecodes. ‧Minimum2transmissionwords. ‧Totallypincompatiblewith145026. ‧S.O.Package─suffix-S. APPLICATION產品應用 ‧Securityalarm,Remotecontrol.防盜系統,任何遙控裝置. | MOSDESIGNMOSDESIGN SEMICONDUCTOR CORP 一华一华半导体股份有限公司 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx |  | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Description TheM45PE16isa16Mbit(2Mx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPa | NUMONYX numonyx | | | |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARYDESCRIPTION TheM45PE20isa2Mbit(256Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■2MbitofPage-ErasableFlashMemory ■PageWrite(upto256Bytes)in11ms(typical) ■PageProgram(upto256Bytes)in1.2ms (typical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARYDESCRIPTION TheM45PE20isa2Mbit(256Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■2MbitofPage-ErasableFlashMemory ■PageWrite(upto256Bytes)in11ms(typical) ■PageProgram(upto256Bytes)in1.2ms (typical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARYDESCRIPTION TheM45PE20isa2Mbit(256Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■2MbitofPage-ErasableFlashMemory ■PageWrite(upto256Bytes)in11ms(typical) ■PageProgram(upto256Bytes)in1.2ms (typical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARYDESCRIPTION TheM45PE20isa2Mbit(256Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■2MbitofPage-ErasableFlashMemory ■PageWrite(upto256Bytes)in11ms(typical) ■PageProgram(upto256Bytes)in1.2ms (typical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARYDESCRIPTION TheM45PE20isa2Mbit(256Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■2MbitofPage-ErasableFlashMemory ■PageWrite(upto256Bytes)in11ms(typical) ■PageProgram(upto256Bytes)in1.2ms (typical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS DUAL 4-BIT LATCH | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
Dual 4-bit latch | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual 4-bit latch | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
M45产品属性
- 类型
描述
- 型号
M45
- 制造商
TR FASTENINGS
- 功能描述
SCREW SLT PAN S/S A2 M4X50
- 制造商
TR FASTENINGS
- 功能描述
SCREW, SLT, PAN, S/S, A2, M4X50
- 制造商
TR FASTENINGS
- 功能描述
SCREW, SLT, PAN, S/S, A2, M4X50; Thread Size -
- Metric
M4; Screw
- Length
50mm; Fastener
- Material
Stainless Steel; Screw Head
- Style
Slotted Pan;
- SVHC
No SVHC(19-Dec-2012); Driver
- Type
Slotted; External
- Length/Height
50mm; ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nuvoton(新唐) |
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
||||
MICRON/镁光 |
23+ |
NA |
4095 |
原装正品代理渠道价格优势 |
|||
ST |
23+ |
SOP16 |
8795 |
||||
MICRON/美光 |
24+ |
SO8W |
9000 |
只做原装，欢迎询价，量大价优 |
|||
micron(镁光) |
24+ |
SOP |
48902 |
正规渠道,大量现货,只等你来。 |
|||
镁光 |
24+ |
SOP-8 |
8000 |
原装，正品 |
|||
原装STM |
19+ |
SMD |
20000 |
||||
ST |
24+ |
SOP16 |
3200 |
十年品牌!原装现货!!! |
|||
ST/意法 |
22+ |
SOP-8 |
3000 |
原装正品,支持实单 |
|||
Micron(ST) |
1716+ |
SOP-8 |
7500 |
只做原装进口,假一罚十 |
M45芯片相关品牌
M45规格书下载地址
M45参数引脚图相关
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- M4244
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- M4237
- M-4230
- M4213
- M4081BP
- M4071BP
- M4069UBP
- M4066BP
- M4053BP
- M4052BP
- M4051BP
- M4050BP
- M4049BP
- M4043BP
- M4042BP
- M4040BP
- M4025BP
- M4024BP
- M4023BP
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M45数据表相关新闻
M430F1610
M430F1610
2023-10-13M430F155
M430F155是一款具有超低功耗、高集成度、32位处理器架构、丰富的外设接口以及安全性和保护功能的微控制器。它适用于各种低功耗、电池供电的嵌入式应用，如无线传感器网络、智能家居、医疗设备等。
2023-7-6M430F448
M430F448
2023-5-16M453VG6AE 原装现货 特价销售
只做原装正品，原包装标签欢迎咨询！
2021-9-10M451VG6AE现货全新进口原装
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-29M471A5244CB0-CRC
M471A5244CB0-CRC
2020-4-21
DdatasheetPDF页码索引
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