型号 功能描述 生产厂家 企业 LOGO 操作
M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

M36P0R9070E0ZAC产品属性

  • 类型

    描述

  • 型号

    M36P0R9070E0ZAC

  • 制造商

    Micron Technology Inc

  • 功能描述

    WIRELESS - Trays

更新时间:2025-11-21 16:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
BGA
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
ST
25+
BGA
30000
原装现货,假一赔十.
ST/意法
22+
BGA
3000
原装正品,支持实单
ST/意法
2450+
BGA
9485
只做原装正品现货或订货假一赔十!
MICRON/美光
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
BGA
16900
正规渠道,只有原装!
ST
07+
BGA
58
原装现货海量库存欢迎咨询
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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