型号 功能描述 生产厂家&企业 LOGO 操作
M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

numonyx

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

numonyx

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

numonyx

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

NUMONYX

numonyx

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件:200.92 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件:214.73 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

M36P0R9070E0ZAC产品属性

  • 类型

    描述

  • 型号

    M36P0R9070E0ZAC

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    512 Mbit(x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit(Burst) PSRAM, 1.8V Supply, Multi-Chip Package

更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
ST
1802+
BGA
6528
只做原装正品现货,或订货假一赔十!
ST/意法
22+
BGA
16800
全新进口原装现货,假一罚十
ST
23+
BGA
30000
原装现货,假一赔十.
MICRON/美光
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/意法
22+
BGA
3000
原装正品,支持实单
ST
07+
BGA
58
原装现货海量库存欢迎咨询
ST
23+
BGA
16900
正规渠道,只有原装!
ST
2511
BGA
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货

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