型号 功能描述 生产厂家 企业 LOGO 操作
M29W641DU70N1T

64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W641D is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single, low voltage, 2.7V to 3.6V VCC supply for the circuitry and a 1.8V to 3.6V VCCQ supply for the Input/Output pins. An optional 12

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W641D is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single, low voltage, 2.7V to 3.6V VCC supply for the circuitry and a 1.8V to 3.6V VCCQ supply for the Input/Output pins. An optional 12

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W641D is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single, low voltage, 2.7V to 3.6V VCC supply for the circuitry and a 1.8V to 3.6V VCCQ supply for the Input/Output pins. An optional 12

STMICROELECTRONICS

意法半导体

更新时间:2025-11-3 16:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2025+
TSOP
3525
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ST
25+
TSSOP-48
3200
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ST
25+23+
BGA
26943
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17+
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6200
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24+
3000
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ST
25+
BGA
3200
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ST/意法
2450+
BGA
8850
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SST
原厂封装
9800
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JVC
23+
BGA
3000
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JVC
24+
BGA
20000
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