型号 功能描述 生产厂家&企业 LOGO 操作

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit512Kbx8or256Kbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

4Mbit(512Kbx8or256Kbx16,BootBlock)LowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

封装/外壳:44-SOIC(0.525",13.34mm 宽) 包装:托盘 描述:IC FLASH 4MBIT PARALLEL 44SO 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 4MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

M29W400BT90产品属性

  • 类型

    描述

  • 型号

    M29W400BT90

  • 功能描述

    闪存 512Kx8 or 256Kx16 90

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-7-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3292
原装现货,当天可交货,原型号开票
ST/意法
24+
TSOP48
880000
明嘉莱只做原装正品现货
ST
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
STM
23+
NA
838
专做原装正品,假一罚百!
ST
2020+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
25+23+
TSOP48
7347
绝对原装正品全新进口深圳现货
ST
2022+
TSOP48
20000
只做原装进口现货.假一罚十
STMICROELECT
05+
原厂原装
4289
只做全新原装真实现货供应
ST
22+
TSOP48
12245
现货,原厂原装假一罚十!
ST/意法
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种

M29W400BT90芯片相关品牌

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  • Heyco
  • NEXPERIA
  • TRSYS

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