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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W400BB | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 |   | |
M29W400BB | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same | STMICROELECTRONICS 意法半导体 | |
M29W400BB产品属性
- 类型
描述
- 型号
M29W400BB
- 制造商
Micron Technology Inc
- 功能描述
FLASH PARALLEL 3.3V 4MBIT 512KX8/256KX16 70NS 48TSOP - Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
BGA69 |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
TSOP48 |
20000 |
全新原装假一赔十 |
|||
ST |
25+ |
3 |
公司优势库存 热卖中!! |
||||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
STM |
25+ |
TSOP48 |
2568 |
原装优势!绝对公司现货 |
|||
ST |
25+23+ |
BGA |
37247 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
22+ |
FBGA48 |
3000 |
原装正品,支持实单 |
|||
ST |
25+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
TSOP48 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
STMICROELECT |
06+ |
原厂原装 |
4320 |
只做全新原装真实现货供应 |
M29W400BB芯片相关品牌
M29W400BB规格书下载地址
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M29W400BB数据表相关新闻
M2S010-TQG144
ARM® Cortex®-M3 嵌入式 - 片上系统 (SoC) IC SmartFusion®2 FPGA - 10K 逻辑模块 166MHz 144-TQFP（20x20）
2024-1-4M2GL150-FCVG484I
进口代理
2022-10-8M29W320ET70N6E 假一罚十
原装正品 欢迎来电咨询！
2020-12-9M29W256GH70N6E公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W160ET-70N6公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W800DT70N6E天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司 0755-82725660 17727837185（微信75056055） QQ：177691499
2019-2-26
DdatasheetPDF页码索引
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