128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC FLASH 128MBIT PARALLEL 56TSOP 集成电路（IC） 存储器

封装/外壳：64-TBGA 包装：托盘 描述：IC FLASH 128MBIT PARALLEL 64TBGA 集成电路（IC） 存储器

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided i

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

Parallel NOR Flash Embedded Memory

文件：841.56 Kbytes Page：76 Pages

128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory

文件：1.86249 Mbytes Page：94 Pages