M29DW128价格

参考价格:¥36.8823

型号:M29DW128G70NF6E 品牌:MIC 备注:这里有M29DW128多少钱,2025年最近7天走势,今日出价,今日竞价,M29DW128批发/采购报价,M29DW128行情走势销售排行榜,M29DW128报价。
型号 功能描述 生产厂家&企业 LOGO 操作

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

numonyx

NUMONYX

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M29DW128产品属性

  • 类型

    描述

  • 型号

    M29DW128

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-6-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/PBF
24+
NA/
446
优势代理渠道,原装正品,可全系列订货开增值税票
ST
23+
NA
20000
全新原装假一赔十
ST/PBF
24+
TSSOP
880000
明嘉莱只做原装正品现货
ST/PBF
0719+
TSSOP
446
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
FBGA
16900
正规渠道,只有原装!
ST/意法
23+
TSOP
7685
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
STM
24+
BGA64
2568
原装优势!绝对公司现货
Micron Technology Inc
23+/24+
56-TFSOP
8600
只供原装进口公司现货+可订货
ST/PBF
23+
TSSOP
5000
原装正品,假一罚十
Micron
22+
56TSOP (14x20)
9000
原厂渠道,现货配单

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