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M29DW128价格
参考价格：￥36.8823
型号：M29DW128G70NF6E 品牌：MIC 备注：这里有M29DW128多少钱，2025年最近7天走势，今日出价，今日竞价，M29DW128批发/采购报价，M29DW128行情走势销售排行榜，M29DW128报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx |  | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：1.78901 Mbytes Page：94 Pages | NUMONYX numonyx | | | |
128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory 文件：756.04 Kbytes Page：94 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29DW128产品属性
- 类型
描述
- 型号
M29DW128
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TSOP |
7685 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
2016+ |
TSOP56 |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
STM |
BGA64 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
23+ |
FBGA |
16900 |
正规渠道,只有原装! |
|||
ST |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/PBF |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
|||
NUYX |
24+ |
56TSOP |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
STM |
24+ |
BGA64 |
2568 |
原装优势!绝对公司现货 |
|||
ST |
21+ |
TSOP-56 |
23480 |
M29DW128芯片相关品牌
M29DW128规格书下载地址
M29DW128参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400FT55N3E2
- M29F400FB5AN6E2
- M29F400FB55N3F2
- M29F400FB55N3E2
- M29F400FB55M3E2
- M29F400
- M29F200FT5AN6E2
- M29F200FT55N3E2
- M29F200FB55N3F2
- M29F200FB55N3E2
- M29F200
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3E2
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M29DW323DT70ZE6E
- M29DW323DT70N6E
- M29DW323DB70ZE6E
- M29DW323DB70N6F
- M29DW323DB70N6E
- M29DW256G70ZA6E
- M29DW256G70NF6E
- M29DW128G70NF6E
- M29DW127G70NF6E
- M-299-WHT
- M295A601632
- M2954
- M2951
- M29504/5-4046
- M29504/4-4040
- M29504/14-4132
- M29504/05-4046
- M2950
- M293B1
- M293366
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640HST70ZA6E
- M28W640HCT70N6E
- M28W640HCB70N6E
- M28W640
- M28W320HSU70ZA6E
- M28W320HSB70ZA6E
- M28W320FCT70ZB6E
- M28W320FCB70ZB6E
- M28W320FCB70N6E
- M28W320ECT70ZB6T
- M28W320ECB70ZB6T
- M28W160ECT70ZB6E
- M28W160ECB70ZB6E
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
- M28S_11
M29DW128数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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