M28W320ECT价格

参考价格:¥21.8784

型号:M28W320ECT70ZB6T 品牌:Micron 备注:这里有M28W320ECT多少钱,2025年最近7天走势,今日出价,今日竞价,M28W320ECT批发/采购报价,M28W320ECT行情走势销售排行榜,M28W320ECT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M28W320ECT

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M28W320ECT产品属性

  • 类型

    描述

  • 型号

    M28W320ECT

  • 功能描述

    闪存 32M(2Mx16) 70ns

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-7-24 10:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2022
BGA
1000
全新原装现货
Micron Technology Inc.
24+
47-TFBGA(6.39x6.37)
56200
一级代理/放心采购
SGS
24+
BGA
1050
Micron
23+
47-TFBGA (6.39x6.37)
36500
原装正品现货库存QQ:2987726803
MICRON/美光
23+
BGA
98900
原厂原装正品现货!!
STM
25+23+
New
33570
绝对原装正品现货,全新深圳原装进口现货
Micron Technology Inc
23+/24+
47-TFBGA
8600
只供原装进口公司现货+可订货
STM
23+
TFBGA47
8560
受权代理!全新原装现货特价热卖!
ST/意法
23+
BGA6.376.39
50000
全新原装正品现货,支持订货
ST
06+
QFN
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力

M28W320ECT芯片相关品牌

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