位置：首页 > IC中文资料第6479页 > M28W160ECT70ZB1S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECT70ZB1S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx |  |   |
M28W160ECT70ZB1S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYX numonyx | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28W160ECT70ZB1S产品属性
- 类型
描述
- 型号
M28W160ECT70ZB1S
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NUMONYX |
BGA46 |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
BGA |
331 |
正品原装--自家现货-实单可谈 |
||||
Numonyx/STMi |
23+ |
46-TFBGA |
65480 |
||||
ST/意法 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
24+ |
2008++ |
7580 |
新进库存/原装 |
|||
ST |
2020+ |
TFBGA46 |
916 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
20+ |
QFN |
20500 |
汽车电子原装主营-可开原型号增税票 |
|||
ST |
23+ |
BGA |
30000 |
原装现货,假一赔十. |
|||
NUMONYX |
25+ |
BGA46 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
22+ |
BGA |
25000 |
只做原装,一站式BOM配单,假一罚十 |
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M28W160ECT70ZB1S规格书下载地址
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