型号 功能描述 生产厂家&企业 LOGO 操作
M28W160ECT70N6U

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

M28W160ECT70N6U

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

M28W160ECT70N6U产品属性

  • 类型

    描述

  • 型号

    M28W160ECT70N6U

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

更新时间:2025-8-9 8:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TFBGA46
89630
当天发货全新原装现货
ST/意法
24+
TFBGA46
21574
郑重承诺只做原装进口现货
ST
24+
BGA
275
原装现货假一罚十
ST/意法
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
ST
20+
QFN
20500
汽车电子原装主营-可开原型号增税票
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
2016+
BGA
6528
只做进口原装现货!或者订货,假一赔十!
Micron
24+
BGA
50000
专营Micron全线品牌假一赔万原装进口货可开增值税发票
ST/意法
22+
BGA
25000
只做原装,一站式BOM配单,假一罚十
ST
23+
BGA
30000
原装现货,假一赔十.

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