型号 功能描述 生产厂家&企业 LOGO 操作
M28W160ECB70ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

M28W160ECB70ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半导体

M28W160ECB70ZB6T产品属性

  • 类型

    描述

  • 型号

    M28W160ECB70ZB6T

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MRON/美光
24+
NA/
5743
原装现货,当天可交货,原型号开票
ST/
22+23+
TSSOP
8000
新到现货,只做原装进口
ST
04+
TSSOP
6800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON/美光
24+
NA
20000
美光专营原装正品
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
2016+
BGA
6528
只做进口原装现货!或者订货,假一赔十!
ST
BGA
331
正品原装--自家现货-实单可谈
ST
23+
TSSOP
9800
全新原装现货,假一赔十
ST
25+23+
46-TFBGA
12695
绝对原装正品全新进口深圳现货
ST/
24+
TSSOP
5000
全新原装正品,现货销售

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