位置：首页 > IC中文资料第6472页 > M28W160ECB100ZB6T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECB100ZB6T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX |   | |
M28W160ECB100ZB6T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | |
M28W160ECB100ZB6T产品属性
- 类型
描述
- 型号
M28W160ECB100ZB6T
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
Micron |
17+ |
6200 |
|||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
STM |
24+ |
BGA |
9875 |
||||
ST |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
MICRON/美光 |
23+ |
9920 |
原装正品，支持实单 |
||||
STM |
25+ |
BGA |
3007 |
||||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Micron |
24+ |
BGA |
50000 |
专营Micron全线品牌假一赔万原装进口货可开增值税发票 |
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DdatasheetPDF页码索引
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