位置：首页 > IC中文资料第6472页 > M28W160ECB100ZB6S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECB100ZB6S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX |   | |
M28W160ECB100ZB6S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | |
M28W160ECB100ZB6S产品属性
- 类型
描述
- 型号
M28W160ECB100ZB6S
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
ST(意法) |
2511 |
8790 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
||||
ST MICROELECTRONICS |
0421 |
9 |
公司优势库存 热卖中! |
||||
MICRON |
25+23+ |
TFBGA46 |
36205 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
25+ |
BGA |
2568 |
原装优势!绝对公司现货 |
|||
ST/意法 |
2450+ |
BGA |
6540 |
原装现货或订发货1-2周 |
|||
ST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2308+ |
BGA |
4580 |
十年专业专注 优势渠道商正品保证公司现货 |
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DdatasheetPDF页码索引
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