位置：首页 > IC中文资料第6424页 > M28W160CB100N6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160CB100N6 | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M28W160CB100N6 | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  | |
M28W160CB100N6产品属性
- 类型
描述
- 型号
M28W160CB100N6
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
20+ |
TSSOP |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
Micron |
1844+ |
TSOP48 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
2020+ |
TSOP |
1173 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
TSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
Micron |
21+ |
48TSOP |
13880 |
公司只售原装,支持实单 |
|||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
BGA |
68900 |
原包原标签100%进口原装常备现货! |
||||
ST |
02+ |
TSOP48 |
9436 |
只做原厂原装,认准宝芯创配单专家 |
|||
ST |
23+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
2023+ |
TSSOP |
3750 |
全新原厂原装产品、公司现货销售 |
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M28W160CB100N6规格书下载地址
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