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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28F201 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 |   | |
M28F201 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY | STMICROELECTRONICS 意法半导体 | | |
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | | ||
2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in | STMICROELECTRONICS 意法半导体 | |
M28F201产品属性
- 类型
描述
- 型号
M28F201
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
2 Mb 256K x 8, Chip Erase FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
PLCC32 |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
97+ |
PLCC |
640 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
24+ |
PLCC |
8540 |
只做原装正品现货或订货假一赔十! |
|||
原装 |
25+23+ |
PLCC-28 |
17402 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
StMicro |
23+ |
NA |
3069 |
专做原装正品,假一罚百! |
|||
ST |
23+ |
PLCC/32 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
ST |
23+ |
PLCC32 |
16900 |
正规渠道,只有原装! |
|||
M28F201-120K1 |
25+ |
96 |
96 |
||||
MITSUBIS |
22+ |
PLCC |
2000 |
原装正品现货 |
M28F201规格书下载地址
M28F201参数引脚图相关
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- M28F201-120XK6TR
- M28F201-120XK6R
- M28F201-120XK3TR
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- M28F201-120XK1TR
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- M28F201-120N6TR
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- M28F201-120N1TR
- M28F201-120N1R
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- M28F201-120K3TR
- M28F201-120K3R
- M28F201-120K1TR
- M28F201-120K1R
- M28F201-120K1
- M28F101-90XN6
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- M28F101-90XN1
- M28F101-90XK6
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- M28F101-90XK1
- M28F101-90P6
- M28F101-90P3
- M28F101-90P1
- M28F101-90N6
- M28F101-90N3
- M28F101-90N1
- M28F101-90K6
- M28F101-90K3
- M28F101-90K1
- M28F101-70XP6
- M28F101-70XK3
- M28F101-70XK1
- M28F101-70P6
- M28F101-70P3
- M28F101
- M28F010
- M28F008
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- M28C64C
- M28C64
- M28C256
- M28C17B
- M28C17A
- M28C17
- M28C16B
- M28C16A
- M28C16
- M28840
- M28758
- M28750
- M28258
- M28256
- M28250
- M28010
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