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M27256

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

M27256

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

M27256

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K (32 x 8) UV erasable PROM, 200ns

INTEL

英特尔

64K(8K x 8) UV ERASABLE PROMs

INTEL

英特尔

M27256产品属性

  • 类型

    描述

  • 型号

    M27256

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE

更新时间:2026-8-4 8:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
DIP-28
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法
23+
CDIP-28
89630
当天发货全新原装现货
ST/意法
24+
CDIP28
37279
郑重承诺只做原装进口现货
OKI
92+
DIP
1570
全新原装进口自己库存优势
ST
24+
DIP-6
75
原装现货假一罚十
ST
23+
DIP
8560
受权代理!全新原装现货特价热卖!
ST
17+
NA
6200
100%原装正品现货
ST
2016+
CDIP
9000
只做原装,假一罚十,公司可开17%增值税发票!
ADI
23+
DIP
12000
全新原装假一赔十
ST/意法
25+
DIP-28
32360
ST/意法全新特价M27256-2F1即刻询购立享优惠#长期有货

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