位置：首页 > IC中文资料第5711页 > M27256
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M27256 | NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M27256 | 256K(32Kx8)UVERASABLEPROM 256K(32Kx8)UVERASABLEPROM | IntelIntel Corporation 英特尔 |  | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
256K(32Kx8)UVERASABLEPROM 256K(32Kx8)UVERASABLEPROM | IntelIntel Corporation 英特尔 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
256K(32Kx8)UVERASABLEPROM 256K(32Kx8)UVERASABLEPROM | IntelIntel Corporation 英特尔 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
256K(32Kx8)UVERASABLEPROM 256K(32Kx8)UVERASABLEPROM | IntelIntel Corporation 英特尔 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
AVDVANCED64K(8Kx8)UVERASABLEPROM
| IntelIntel Corporation 英特尔 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS64K(8Kx8)UVEPROM DESCRIPTION TheM2764Aisa65,536bitUVerasableandelectricallyprogrammablememoryEPROM.Itis organizedas8,192wordsby8bits. TheM27C64Aishousedina28pinWindowCeramicFrit-SealDual-in-Linepackage.Thetrans parentlidallowstheusertoexposethechiptoultraviol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS512K64Kx8UVEPROM DESCRIPTION TheM27512isa524,288bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas65,536wordsby8bits.TheM27512ishousedina28PinWindowCeramicFrit-SealDual-in-Linepackage.Thetransparentlidallowstheusertoexposethechiptoultravioletlight | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NMOS256K32Kx8UVEPROM DESCRIPTION TheM27256isa262,144bitUVerasableandelectricallyprogrammablememoryEPROM.Itisorganizedas32.768wordsby8bits. ■FASTACCESSTIME:170ns ■EXTENDEDTEMPERATURERANGE ■SINGLE5VSUPPLYVOLTAGE ■LOWSTANDBYCURRENT:40mAmax ■TTLCOMPATIBLEDURINGREADandPROGRA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64K(8Kx8)UVERASABLEPROMs
| IntelIntel Corporation 英特尔 | | |
M27256产品属性
- 类型
描述
- 型号
M27256
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
DIP28 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
24+ |
CDIP |
18000 |
原装正品 有挂有货 假一赔十 |
|||
OKI |
01+ |
DIP |
328 |
原装现货 |
|||
LT |
24+ |
CDIP |
17500 |
原装现货 自家库存 欢迎来电 |
|||
ST/意法 |
94+ |
CDIP40 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
23+ |
CDIP28 |
50000 |
全新原装正品现货,支持订货 |
|||
OKI |
23+ |
DIP-28 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
|||
ST |
24+/25+ |
13 |
原装正品现货库存价优 |
||||
ST/意法 |
24+ |
NA/ |
28 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
CDIP28 |
12800 |
公司只有原装 欢迎来电咨询。 |
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M27256规格书下载地址
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M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
DdatasheetPDF页码索引
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