位置：首页 > IC中文资料第5711页 > M27256
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M27256 | NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 |   | |
M27256 | 256K(32K x 8) UV ERASABLE PROM 256K(32K x 8) UV ERASABLE PROM | Intel 英特尔 | | |
M27256 | 256K(32K x 8) UV ERASABLE PROM | Intel 英特尔 | | |
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x 8) UV ERASABLE PROM 256K(32K x 8) UV ERASABLE PROM | Intel 英特尔 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x 8) UV ERASABLE PROM 256K(32K x 8) UV ERASABLE PROM | Intel 英特尔 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
256K(32K x 8) UV ERASABLE PROM 256K(32K x 8) UV ERASABLE PROM | Intel 英特尔 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
AVDVANCED 64K (8K x 8) UV ERASABLE PROM
| Intel 英特尔 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
NMOS 64K (8K x 8) UV EPROM DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol | STMICROELECTRONICS 意法半导体 | | ||
NMOS 512K 64K x 8 UV EPROM DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light | STMICROELECTRONICS 意法半导体 | | ||
NMOS 256K 32K x 8 UV EPROM DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA | STMICROELECTRONICS 意法半导体 | | ||
256K (32 x 8) UV erasable PROM, 200ns | Intel 英特尔 | | ||
64K(8K x 8) UV ERASABLE PROMs
| Intel 英特尔 | |
M27256产品属性
- 类型
描述
- 型号
M27256
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+23+ |
DIP28 |
22599 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
0 |
16900 |
正规渠道,只有原装! |
|||
ST |
6 |
公司优势库存 热卖中!! |
|||||
ST |
25+ |
CDIP |
18000 |
原厂直接发货进口原装 |
|||
ST |
24+ |
CDIP |
18000 |
原装正品 有挂有货 假一赔十 |
|||
ST |
新 |
60 |
全新原装 货期两周 |
||||
ST/意法 |
24+ |
CDIP28 |
37279 |
郑重承诺只做原装进口现货 |
|||
24+ |
3000 |
公司存货 |
|||||
ST |
17+ |
NA |
6200 |
100%原装正品现货 |
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M27256规格书下载地址
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