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型号 功能描述 生产厂家 企业 LOGO 操作
M27256

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

M27256

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

M27256

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K (32 x 8) UV erasable PROM, 200ns

INTEL

英特尔

64K(8K x 8) UV ERASABLE PROMs

INTEL

英特尔

M27256产品属性

  • 类型

    描述

  • 型号

    M27256

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE

更新时间:2026-5-18 16:36:00
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原装优势!房间现货!欢迎来电!
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一级代理原装现货,特价热卖!
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原装现货海量库存欢迎咨询
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93+
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全新 发货1-2天
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郑重承诺只做原装进口现货

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