型号 功能描述 生产厂家 企业 LOGO 操作
M27256

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

M27256

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

Intel

英特尔

M27256

256K(32K x 8) UV ERASABLE PROM

Intel

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

Intel

英特尔

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

Intel

英特尔

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

Intel

英特尔

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

Intel

英特尔

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

NMOS 64K (8K x 8) UV EPROM

DESCRIPTION The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviol

STMICROELECTRONICS

意法半导体

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 256K 32K x 8 UV EPROM

DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. ■ FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRA

STMICROELECTRONICS

意法半导体

256K (32 x 8) UV erasable PROM, 200ns

Intel

英特尔

64K(8K x 8) UV ERASABLE PROMs

Intel

英特尔

M27256产品属性

  • 类型

    描述

  • 型号

    M27256

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE

更新时间:2025-11-19 11:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
0
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ADI
23+
DIP
12000
全新原装假一赔十
ST/意法
2023+
CDIP28
8635
一级代理优势现货,全新正品直营店
ST
24+
CDIP
18000
原装正品 有挂有货 假一赔十
ST
25+23+
DIP28
22599
绝对原装正品全新进口深圳现货
ST
22+
CDIP
12245
现货,原厂原装假一罚十!
ST
25+
0
16900
原装,请咨询
ST
17+
NA
6200
100%原装正品现货
OKI
23+
DIP-28
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/意法
2025+
DIP
4950
原装进口价格优 请找坤融电子!

M27256数据表相关新闻