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M25PE16价格
参考价格：￥6.3818
型号：M25PE16-VMP6TG 品牌：MIC 备注：这里有M25PE16多少钱，2025年最近7天走势，今日出价，今日竞价，M25PE16批发/采购报价，M25PE16行情走势销售排行榜，M25PE16报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE16 | 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 |   | |
M25PE16 | 16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | |
M25PE16 | 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout | STMICROELECTRONICS 意法半导体 | | |
M25PE16 | 16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout | Micron 美光 | | |
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page | NUMONYX | | ||
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | Micron 美光 | | ||
封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FLASH 16MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FLASH 16MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
16-Mbit DataFlash-L Page Erase Serial Flash Memory Features Single 2.3V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV ) of 6ns maximum | RENESAS 瑞萨 | | ||
16-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：922.75 Kbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
16-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：922.75 Kbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
16-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：922.75 Kbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
16-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：922.75 Kbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | |
M25PE16产品属性
- 类型
描述
- 型号
M25PE16
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
27048 |
全新原装正品/价格优惠/质量保障 |
|||
micron(镁光) |
24+ |
VQFN-8(5x6) |
7883 |
百分百原装正品,可原型号开票 |
|||
ST |
23+ |
SO8W/MLP8? |
8000 |
全新原装假一赔十 |
|||
MICRON/美光 |
25+ |
SO8W |
32360 |
MICRON/美光全新特价M25PE16-VMW6TG即刻询购立享优惠#长期有货 |
|||
ST |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
MICRON/美光 |
18+ |
QFN8 |
882 |
原装现货 价格优势 |
|||
MICRON |
24+ |
SOP8W |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MICRON/美光 |
24+ |
NA |
20000 |
美光专营原装正品 |
|||
ST |
24+ |
SOP |
30000 |
原装正品公司现货,假一赔十! |
|||
MICRON/镁光 |
24+ |
SOIC8 |
50000 |
全新原装现货特价销售,欢迎来电查询 |
M25PE16规格书下载地址
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2019-2-28
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