M25PE16价格

参考价格:¥6.3818

型号:M25PE16-VMP6TG 品牌:MIC 备注:这里有M25PE16多少钱,2025年最近7天走势,今日出价,今日竞价,M25PE16批发/采购报价,M25PE16行情走势销售排行榜,M25PE16报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M25PE16

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

M25PE16

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

M25PE16

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

STMICROELECTRONICS

意法半导体

M25PE16

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Micron

美光

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

STMICROELECTRONICS

意法半导体

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

NUMONYX

Serial NOR Flash

Micron

美光

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:托盘 描述:IC FLASH 16MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:托盘 描述:IC FLASH 16MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

16-Mbit DataFlash-L Page Erase Serial Flash Memory

Features  Single 2.3V - 3.6V supply  Serial Peripheral Interface (SPI) compatible  Supports SPI modes 0 and 3  Supports RapidS™ operation  Continuous read capability through entire array  Up to 85MHz  Low-power read option up to 15MHz  Clock-to-output time (tV ) of 6ns maximum 

RENESAS

瑞萨

16-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:922.75 Kbytes Page:63 Pages

DialogDialog Semiconductor

戴乐格

16-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:922.75 Kbytes Page:63 Pages

DialogDialog Semiconductor

戴乐格

16-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:922.75 Kbytes Page:63 Pages

DialogDialog Semiconductor

戴乐格

16-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:922.75 Kbytes Page:63 Pages

DialogDialog Semiconductor

戴乐格

M25PE16产品属性

  • 类型

    描述

  • 型号

    M25PE16

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

更新时间:2025-12-25 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
18+
QFN8
882
原装现货 价格优势
MICRON
22+
QFN8
9035
原装正品,实单请联系
MICRON/美光
25+
SOP
13800
原装,请咨询
micron(镁光)
24+
VQFN-8(5x6)
7883
百分百原装正品,可原型号开票
NUMONYX
25+
SO8W
5000
原装现货,特价销售!
MICRON
24+
QFN-8
2700
MICRON专营原装进口现货
MICRON/镁光
25+
SOP8
12500
专营美光原装现货
MICRON
23+
SOP-8
8600
受权代理!全新原装现货特价热卖!
MICRON
26+
SOP8
360000
原装现货
MIC
16+
SOP
1500
代理渠道原装正品H

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