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M2045S

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL A

VISHAYVishay Siliconix

威世威世科技公司

M2045S

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:136.13 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL A

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: for definitions of compliance

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL A

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL A

VISHAYVishay Siliconix

威世威世科技公司

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

钮子开关

NKKSWITCHES

恩楷楷

General Specifications

文件:343.17 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:343.17 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:343.17 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:343.17 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:136.13 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE SCHOTTKY 45V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:136.13 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

恩楷楷

包装:散装 描述:MINIATURE TOGGLE/MULTI-FUNCTION 开关 拨动开关

NKK

恩楷楷

General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

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General Specifications

文件:1.23393 Mbytes Page:28 Pages

NKK

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UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

M2045S产品属性

  • 类型

    描述

  • 型号

    M2045S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-8-2 19:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY原装
25+23+
TO-220
22487
绝对原装正品全新进口深圳现货
22+
TO220
20000
只做原装
VISHAY
17+
TO-220
4950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
22+
TO-220
6000
十年配单,只做原装
VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
NKK/COPAL/FUJISOKU
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY原装
24+
TO-220
30980
原装现货/放心购买
Vishay
NA
16355
一级代理 原装正品假一罚十价格优势长期供货

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