P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

enhancement-type n-channel MOSFET

• General Purpose Amplifiers • Analog Switches • Digital Switching

Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier

FEATURES • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . .

Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier

FEATURES\n• Low IGSS\n• Integrated Zener Clamp for Gate ProtectionDrain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V\nGate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V\nDrain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . • Low IGSS\n• Integrated Zener Clamp for Gate ProtectionDrain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V\nGate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V\nDrain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .;

WITH 4 PATTERN DISPLAY 16 LED FLASH

FEATURES 功能敘述 ‧ TRIG：TG1─clockwise. TG2─counterclockwise. ‧ SEQ：Display 1 pattern sequentially. ‧ DEMO：Display 4 patterns sequentially. ‧ LH：level-hold. (Default OSH) APPLICATION 產品應用 ‧ Arcade game system, Toys.

WITH 4 PATTERN DISPLAY 16 LED FLASH

FEATURES 功能敘述 ‧ TRIG：TG1─clockwise. TG2─counterclockwise. ‧ SEQ：Display 1 pattern sequentially. ‧ DEMO：Display 4 patterns sequentially. ‧ LH：level-hold. (Default OSH) APPLICATION 產品應用 ‧ Arcade game system, Toys.

4 PATTERN DISPLAY 8 LED FLASH

FEATURES 功能敘述 ‧ Operating voltage 2.4 ~ 5.5Volt. ‧ Use external R,C oscillator. ‧ LED output source current driver. ‧ TG：Detector the DC motor speed via reed switch or Hall effect IC active low , motor counterclockwise. ‧ Display 4 pattern sequentially , customer’s display pattern can be prog

4 PATTERN DISPLAY 8 LED FLASH

FEATURES 功能敘述 ‧ Operating voltage 2.4 ~ 5.5Volt. ‧ Use external R,C oscillator. ‧ LED output source current driver. ‧ TG：Detector the DC motor speed via reed switch or Hall effect IC active low , motor counterclockwise. ‧ Display 4 pattern sequentially , customer’s display pattern can be prog

4 PATTERN DISPLAY 8 LED FLASH

FEATURES 功能敘述 ‧ Operating voltage 2.4 ~ 5.5Volt. ‧ Use external R,C oscillator. ‧ LED output source current driver. ‧ TG：Detector the DC motor speed via reed switch or Hall effect IC active low , motor counterclockwise. ‧ Display 4 pattern sequentially , customer’s display pattern can be prog

4 PATTERN DISPLAY 8 LED FLASH

FEATURES 功能敘述 ‧ Operating voltage 2.4 ~ 5.5Volt. ‧ Use external R,C oscillator. ‧ LED output source current driver. ‧ TG：Detector the DC motor speed via reed switch or Hall effect IC active low , motor counterclockwise. ‧ Display 4 pattern sequentially , customer’s display pattern can be prog

包装：散装 描述：METRIC ROUND STANDOFFPLAIN BRASS 五金件，紧固件，配件 板垫片，支座

包装：散装 描述：METRIC ROUND STANDOFFNO FINISH - 五金件，紧固件，配件 板垫片，支座

快速恢复二极管 - 平板型

快速恢复二极管 - 平板型

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS