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UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

PHILIPS

飞利浦

LOW-NOISE DUAL PRE-AMPLIFIER

文件:218.65 Kbytes Page:5 Pages

NJRC

日本无线

LOW-NOISE DUAL PRE-AMPLIFIER

文件:218.65 Kbytes Page:5 Pages

NJRC

日本无线

LOW-NOISE DUAL PRE-AMPLIFIER

文件:218.65 Kbytes Page:5 Pages

NJRC

日本无线

LOW-NOISE DUAL PRE-AMPLIFIER

文件:218.65 Kbytes Page:5 Pages

NJRC

日本无线

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