Features

◇ For general purpose applications

◇ This diodes features very low turn-on voltage

and fast switching. This devices are protected

by a PN junction guard ring against excessive

voltage, such as electrostatic discharges

◇ Metal silicon schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,steering,biasing and coupling diodes for

fast switching and low logic level applications

Mechanical Data

◇ Case:JEDEC DO--35,glass case

◇ Polarity: Color band denotes cathode end

◇ Weight: Approx. 0.13 gram