Silicon Hot–Carrier Diodes Schottky Barrier Diode

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V

• Low Reverse Leakage – I R = 13 nAdc (Typ)

• Device Marking: 4T

• We declare that the material of product

compliance with RoHS requirements.

• S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable.