PNP EPITAXIAL PLANAR TRANSISTOR

We declare that the material of product

compliance with RoHS requirements

Description

The LMBTA94LT1G is designed for application that requires high voltage.

Features

• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA

• Complementary to LMBTA94LT1G

• S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.