DESCRIPTION

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

FEATURES

• We declare that the material of product compliance with RoHS requirements.

• Low Noise and High Gain

NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

• High Power Gain

MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz