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L2SA1365ELT1G中文资料

厂家型号

L2SA1365ELT1G

文件大小

1087.44Kbytes

页面数量

3

功能描述

General Purpose Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

LRC

L2SA1365ELT1G数据手册规格书PDF详情

DESCRIPTION

L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor,

designed with high collector current and small VCE(sat).

FEATURE

● Small collector to emitter saturation voltage.

VCE(sat)=-0.2V typ

● Excellent linearity of DC forward current gain.

● Super mini package for easy mounting

● We declare that the material of product compliance with RoHS requirements.

● We declare that the material of product is ROHS compliant

● High collector current I =-1A CM

● High gain band width product f =180MHz typ T

● S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.

APPLICATION

Small type motor drive, relay drive, power supply.

更新时间:2025-10-12 15:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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