Description

Benchmark setting breakdown voltage performance, protecting

sub 20 nm I/O’s. Finer geometry chip designs run the risk of

damage at voltage levels higher than 3.3V. The SP33R6 is a

breakdown avalanche diode for ultra high speed interfaces and it

provides headroom to support all of the low voltage differential

signaling (0.3V) while protecting the data lines from damaging

overvoltage, starting at 0.6V.

Features

■ ESD, IEC 61000-4-2, ±12kV

contact, ±15kV air

■ EFT, IEC 61000-4-4, 40A

(5/50ns)

■ Lightning, IEC 61000-4-5,

2nd Edition, 3A (8/20us)

■ Low capacitance of 0.2pF

(TYP) per I/O

■ Halogen-free, lead-free and

RoHS compliant

Applications

■ USB 3.2, USB 4.0

■ Thunderbolt 3.0

■ PCIE