Description

This series of silicon carbide (SiC) Schottky diodes has

negligible reverse recovery current, high surge capability,

and a maximum operating junction temperature of 175

°C. These diodes series are ideal for applications where

improvements in efficiency, reliability, and thermal

management are desired.

Features

• AEC-Q101 qualified

• Positive temperature

coefficient for safe

operation and ease of

paralleling

• 175 °C maximum

operating junction

temperature

• Excellent surge capability

• Extremely fast,

temperature-independent

switching behavior

• Dramatically reduced

switching losses

compared to Si bipolar

diodes

Applications

• Boost diodes in PFC or

DC/DC stages

• Switch-mode power

supplies

• Uninterruptible power

supplies

• Solar inverters

• Industrial motor drives

• EV charging stations