位置：MZS1206 > MZS1206详情
MZS1206中文资料
MZS1206数据手册规格书PDF详情
Features
(1) Attenuation effect against high voltage pulse noise
(2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc.
(3) Attenuates conductive emission from power supply
(4) Leakage current: 1mA max. (250V, 60Hz)
(5) High shielded effect
MZS1206产品属性
- 类型
描述
- 型号
MZS1206
- 制造商
LAMBDA
- 制造商全称
DENSEI-LAMBDA
- 功能描述
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
MZS1206 资料下载更多...
MZS1206 芯片相关型号
- 114-Z1-316-41-134161
- 123-93-328-41-001
- 917-99-104-41-005
- 999-11-230-11
- AD404M164RBB-5
- DSR50-48-24
- DSR50-48-48
- EWS25-15
- EWS50-15
- EWS50-48
- EWS50-9
- GEN150-5
- GEN40-38
- HK50A-5
- HYB18D1G800TC-5
- HYB18S1G800TC-5
- HYB25D1G800TC-5
- HYB39D128160TT-5
- JWS100-12
- JWS100-15
- MAW-12R5
- MX13100
- MZS1220-33
- NES120
- NES30-24
- NNS15
- PAF400F280
- PAH200H48-1R2
- PCN21A-95PM-2W-G
- THS4502CD
LAMBDA相关芯片制造商
Datasheet数据表PDF页码索引
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