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LY402

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

Low-Gain Op Amp with Fast 14-Bit Settling

文件:394.94 Kbytes Page:6 Pages

NSC

国半

Low-Gain Op Amp with Fast 14-Bit Settling

文件:394.94 Kbytes Page:6 Pages

NSC

国半

Low-Gain Op Amp with Fast 14-Bit Settling

文件:394.94 Kbytes Page:6 Pages

NSC

国半

Low-Gain Op Amp with Fast 14-Bit Settling

文件:394.94 Kbytes Page:6 Pages

NSC

国半

Low-Gain Op Amp with Fast 14-Bit Settling

文件:394.94 Kbytes Page:6 Pages

NSC

国半

LY402产品属性

  • 类型

    描述

  • 型号

    LY402

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

更新时间:2026-5-24 16:20:00
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