HF HYPERABRUPT TUNING DIODES

HF HYPERABRUPT TUNING DIODES • Extremely high capacitance ratios provide frequency tuning up to 4:1 • Linear performance is achieved between 1.5 and 4 volts • Diode capacitance values ranging from 46 to 350 pF • Designed for use at frequencies up to 100 MHZ

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: ED1702. FEATURES • Low current (max. 500 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification.

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: ED1702. FEATURES • Low current (max. 500 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification.

Integrated Circuit Power Amplifier for Car Stereo Radio, 12W/Ch or 24W BTL

Description: The NTE1802 is an integrated class–B output amplifier in a 13–Lead SIP type package. This device contains two identical amplifiers with different input stages which can be used for stereo or bridge applications. The gain of each amplifier is fixed at 20dB. A special feature of the

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1802 is a switching device which can be driven directly by a 2.5-V power source. The µPA1802 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can