HF HYPERABRUPT TUNING DIODES

HF HYPERABRUPT TUNING DIODES • Extremely high capacitance ratios provide frequency tuning up to 4:1 • Linear performance is achieved between 1.5 and 4 volts • Diode capacitance values ranging from 46 to 350 pF • Designed for use at frequencies up to 100 MHZ

MICROWAVE POWER GaAs FET

DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURES • Hig

TAPE CARRIER MICROWAVE POWER GaAs FET?

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE?

FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy System (PHS), other wireless Personal Communication Systems (PCS) applications, and 2.4 GHz ISM band applications. The MRFIC1801 is a single pole, double throw reflective antenna switch featuring low insertion loss and high power handling ca

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1801 is a switching device which can be driven directly by a 2.5-V power source. The µPA1801 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri