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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

丝印代码:LV132A;SN74LVC132A Quadruple 2-Input NAND Gates with Schmitt-Trigger Inputs

1 Features • Operating range from 1.1V to 3.6V • 5.5V tolerant input pins • Supports standard pinouts • Latch-up performance exceeds 250mA per JESD 17 • ESD protection exceeds JESD 22 – 2000V Human-Body Model (A114-A) – 1000V Charged-Device Model (C101) 2 Applications Combining power g

TI

德州仪器

丝印代码:LV132A;SN74LVC132A Quadruple 2-Input NAND Gates with Schmitt-Trigger Inputs

1 Features • Operating range from 1.1V to 3.6V • 5.5V tolerant input pins • Supports standard pinouts • Latch-up performance exceeds 250mA per JESD 17 • ESD protection exceeds JESD 22 – 2000V Human-Body Model (A114-A) – 1000V Charged-Device Model (C101) 2 Applications • Combining power

TI

德州仪器

LV132A

SNx4LV132A Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs

1 Features 1• 2-V to 5.5-V VCC Operation • Max t pd of 9 ns at 5 V • Typical VOLP (Output Ground Bounce) 2.3 V at VCC = 3.3 V, TA = 25°C • Support Mixed-Mode Voltage Operation on All Ports • Latch-Up Performance Exc

TI

德州仪器

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

更新时间:2026-3-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
WQFN-14
11491
样件支持,可原厂排单订货!
TI
25+
WQFN-14
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
TI(德州仪器)
2021+
8000
原装现货,欢迎询价
TI(德州仪器)
26+
N/A
360000
只有原装 可配单
TI(德州仪器)
2450+
SMD
9850
只做原装正品代理渠道!假一赔三!
TI
24+
TSSOP-14
25000
TI一级代理进口原装现货假一赔十
Texas Instruments
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
TI(德州仪器)
23+
标准封装
6000
正规渠道,只有原装!
TMS
05+
SOIC
1000
全新原装 绝对有货
TI
24+
5000
自己现货

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