300MHz Digital Predistortion Receiver

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300MHz 宽带接收器

300MHz Wideband Receiver

文件：960.23 Kbytes Page：38 Pages

封装/外壳：196-BBGA 功能：接收器 包装：卷带（TR） 描述：300MHZ PREDIST RECEIVER 196BGA RF/IF，射频/中频和 RFID RF 其它 IC 和模块

封装/外壳：196-BBGA 功能：接收器 包装：管件 描述：300MHZ PREDIST RECEIVER 196BGA RF/IF，射频/中频和 RFID RF 其它 IC 和模块

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO: 45 V

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.