40VIN, Dual 500mA or Single 1A Ultralow Noise, Ultrahigh PSRR μModule Regulator

DESCRIPTION The LTM®8080 is a 40VIN, dual 500mA or single 1A ultralow noise, ultrahigh PSRR μModule® regulator. LTM8080 has cascaded architecture which contains a 40VIN step-down Silent Switcher regulator with an integrated EMI noise shield followed by dual high-performance low dropout linea

Triple 3A, Ultralow Noise, High PSRR, Ultrafast μModule Linear Regulator with Configurable Output Array

DESCRIPTION The LTM®4709 is a low voltage, triple 3A μModule linear regulator offering a high power supply rejection ratio (PSRR), ultralow noise, and ultrafast transient response. The μModule regulator includes low dropout linear regulators (LDO), capacitors, and resistors. Operating over a

16VIN, 12A Ultralow Noise Silent Switcher 3 μModule Regulator

FEATURES APPLICATIONS n Complete Solution in

Quad 40VIN, 3A Silent Switcher μModule Regulator with Package-Level EMI Shield

FEATURES Package-Level EMI Shielding Minimize Near-Field Electric Field Noise Reduce Near-Field Magnetic Field Noise Pin-to-Pin Compatible with the LTM8060 Four Complete 3A (4A peak) Step-Down SwitchingPower Supplies Low Noise Silent Switcher Architecture Compliant with CISPR22 Class

40Vin、2.5A Silent Switcher μModule 稳压器

40VIN, 2A Silent Switcher 關Module Regulator

文件：1.06453 Mbytes Page：24 Pages

40VIN, 2.5A Silent Switcher 關Module Regulator

文件：1.17955 Mbytes Page：26 Pages

Quad 40VIN Silent Switcher 關Module Regulator with Configurable 1.2A Output Array

文件：2.57176 Mbytes Page：28 Pages

Quad 40VIN, Silent Switcher 關Module Regulator with Configurable 3A Output Array

文件：2.69623 Mbytes Page：28 Pages

封装/外壳：36-BBGA 模块 包装：托盘 描述：DC DC CONVERTER 0.97-18V 电源 - 板安装 直流转换器

封装/外壳：36-BBGA 模块 包装：管件 描述：DC DC CONVERTER 0.97-18V 电源 - 板安装 直流转换器

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga