NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes

NPN microwave power transistor

1-pole/2-pole 16A polarized power relays Variety of contact arrangements

FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c

20V, 500mA, Low Noise, CMOS LDO

FEATURES  Input voltage range: 4V to 20V  Maximum output current: 500mA  Low noise: 32μVrms for fixed output versions  PSRR performance of 58dB at 10kHz, VOUT = 3.3V  Reverse current protection  Low dropout voltage: 400mV at 500mA  Initial accuracy: ±0.8%  Accuracy over line, l

5 mm Character Height LCD Modules

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