High Speed Synchronous N-Channel MOSFET Driver

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封装/外壳：8-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8DFN 集成电路（IC） 栅极驱动器

封装/外壳：8-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8DFN 集成电路（IC） 栅极驱动器

High Speed Synchronous N-Channel MOSFET Driver

文件：169.77 Kbytes Page：12 Pages

High Speed Synchronous N-Channel MOSFET Driver

文件：169.77 Kbytes Page：12 Pages

High Speed Synchronous N-Channel MOSFET Driver

文件：169.77 Kbytes Page：12 Pages

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V)

6500V/關s, Wideband, High-Output-Current, Single- Ended-to-Differential Line Drivers with Enable

General Description The MAX4447/MAX4448/MAX4449 single-ended-to differential line drivers are designed for high-speed communications. Using current feedback for greater bandwidth, these devices deliver full-power bandwidths up to 405MHz and feature slew rates as high as 6500V/µs. The MAX4447 ha

6500V/關s, Wideband, High-Output-Current, Single- Ended-to-Differential Line Drivers with Enable

General Description The MAX4447/MAX4448/MAX4449 single-ended-to differential line drivers are designed for high-speed communications. Using current feedback for greater bandwidth, these devices deliver full-power bandwidths up to 405MHz and feature slew rates as high as 6500V/µs. The MAX4447 ha

General Purpose Diodes

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