封装/外壳：28-WFQFN 裸露焊盘 功能：升压/降压 包装：管件 描述：IC REG BCK BST ADJ 5A 28QFN 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：28-WFQFN 裸露焊盘 功能：升压/降压 包装：管件 描述：IC REG BCK BST ADJ 5A 28QFN 集成电路（IC） DC DC 开关稳压器

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

High Efficiency 2X Charge Pump

General Description The AAT3119 is a general purpose high efficiency voltage regulated charge pump IC that can produce output current levels up to 150mA. As a voltage regulated output device, it may be used for general voltage boost applications or to power white, RGB, or flash type LEDs from a 2

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin plastic package. FEATURES ● TrenchMOS output stage ● Current limiting ● Overload protection ● Overtemperature protection ● Protection latched reset by input ● 5 V l