Dual 12-Bit, 105Msps Low Power 3V ADC

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METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 6V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE (Typical

T1 FDL Controller/Monitor Stik

DESCRIPTION The DS2282 completely controls the Facility Data Link (FDL) as described in the Bellcore document TR–TSY–000194 (Extended Superframe Format Interface Specification – December 1987) and the ANSI document T1.403–1989 (Carrier to Carrier Installation – DS1 Metallic Interface). It also im

With the ever-increasing success

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Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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CONTENTS

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