UNDERSTANDING THE SUBJECT IS CUSTOMER SERVICE

[L.E.D. TECHNOLOGY LTD] UNDERSTANDING THE SUBJECT IS CUSTOMER SERVICE

Photo DMOS-FET Relay

Description The LT813 is a 1-Form A solid state relay in an 6 pin DIP package that employs optically coupled MOSFET technology to provide 3750V/5000V of input to output isolation. The optically coupled input is controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output sid

光电继电器-DIP/SMD

SQUARE TYPE Electrical/Optical Characteristics at TA=25℃

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1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f