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LT610价格
参考价格：￥9.9168
型号：LT6100CDD#PBF 品牌：Linear 备注：这里有LT610多少钱，2025年最近7天走势，今日出价，今日竞价，LT610批发/采购报价，LT610行情走势销售排行榜，LT610报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LT610 | PhotoDMOS-FETRelay Description TheLT610isa1-FormAsolidstaterelayina4pinSMDpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750V/5000Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside | LETEXLETEX technology corp 台湾丽太丽太科技股份有限公司 |  |   |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
WideRangeI2CPowerMonitor FEATURES Rail-to-RailInputRange:0Vto80V WideInputSupplyRange:2.7Vto80V ShuntRegulatorforSupplies>80V ΔΣADCwithlessthan±0.75%TotalUnadjustedError 12-BitResolutionforCurrentandVoltages InternalMultiplierCalculates24-BitPowerValue StoresMinimumandMaximum | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：1.4342 Mbytes Page：18 Pages | LINERLinear Technology 凌力尔特凌特半导体 |  | | |
HighVoltage,High-SideCurrentSense 文件：258.26 Kbytes Page：22 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：244.91 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
HighVoltage,BidirectionalCurrentSenseAmplifierLowPowerShutdown 文件：940.03 Kbytes Page：24 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：1.4342 Mbytes Page：18 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,GainSelectableHighSideCurrentSenseAmplifier 文件：257.86 Kbytes Page：16 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
HighVoltage,BidirectionalCurrentSenseAmplifierLowPowerShutdown 文件：940.03 Kbytes Page：24 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
WideRangeI2CPowerMonitorRail-to-RailInputRange:0Vto80V 文件：1.39454 Mbytes Page：32 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：380.32 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Uni-Dir.Rail-to-RailCurrentSenseAMP 文件：33.63 Kbytes Page：1 Pages | LINEAR Linear Integrated Systems |  | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
Precision,ExtendedInputRangeCurrentSenseAmplifier 文件：377.11 Kbytes Page：20 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
HighVoltage,BidirectionalCurrentSenseAmplifierLowPowerShutdown 文件：940.03 Kbytes Page：24 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：244.91 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：250.4 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：250.4 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：244.91 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | | |
36VLowCostHighSideCurrentSenseinaSOT-23 文件：244.91 Kbytes Page：12 Pages | LINERLinear Technology 凌力尔特凌特半导体 | | |
LT610产品属性
- 类型
描述
- 型号
LT610
- 制造商
LAUREL ELECTRONICS
- 功能描述
Basic main assembly for Laureate LT transmitter, pulse input, 10-48 Vdc power, 4
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺) |
24+ |
DFN8 |
8524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
ADI(亚德诺) |
24+ |
DFN6(2x3) |
3238 |
原装现货,免费供样,技术支持,原厂对接 |
|||
LINEAR |
2016+ |
MSOP8 |
2778 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
LINEAR |
三年内 |
1983 |
只做原装正品 |
||||
LINEAR/凌特 |
25+ |
MSOP-8 |
58788 |
百分百原装现货 实单必成 欢迎询价 |
|||
LINEAR/凌特 |
22+ |
MSOP8 |
100000 |
代理渠道/只做原装/可含税 |
|||
LT |
24+ |
MSOP8 |
157147 |
明嘉莱只做原装正品现货 |
|||
ADI(亚德诺)/LINEAR(凌特) |
2024+ |
MSOP-10 |
500000 |
诚信服务,绝对原装原盘 |
|||
ADI/亚德诺 |
22+ |
66900 |
原封装 |
||||
LT |
23+ |
MSOP-8P |
9526 |
LT610芯片相关品牌
LT610规格书下载地址
LT610参数引脚图相关
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- LT6100
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- LT6017MPDJC#PBF
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- LT6017
- LT6016MPMS8#PBF
- LT6016IMS8#PBF
- LT6016HMS8#PBF
- LT6016
- LT6015MPS5#TRMPBF
- LT6015IS5#TRMPBF
- LT6015HS5#TRMPBF
- LT6015
- LT6014IS8#PBF
- LT6014ACS8#PBF
- LT6014
- LT6013CS8#PBF
- LT6013
- LT6012CS#PBF
- LT6012CGN#PBF
- LT6012AIGN#PBF
- LT6012ACS#PBF
- LT6012
- LT6011IS8#PBF
- LT6011IMS8#PBF
- LT6011IDD#PBF
- LT6011
- LT6010
- LT601
- LT600Z
- LT6005
- LT6004
- LT6003
- LT6002
- LT6001
- LT6000
- LT6.5MB
- LT6.0MB
LT610数据表相关新闻
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DdatasheetPDF页码索引
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