40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range

FEATURES n Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Exceptional Accuracy Over Temperature: ±0.5dB (Typ) n Low Linearity Error within Dynamic Range n Single-Ended or Differential RF Inputs

宽动态范围 RF/IF 对数检波器

LT®5537 是一款宽动态范围 RF/IF 检波器，工作频率范围为 10MHz 以下至 1000MHz。工作频率范围的下限可通过采用一个外部电容器而被扩展至接近 DC。200MHz 频率和 ±3dB 非线性条件下的输入动态范围为 90dB (从 -76dBm 至 14dBm，单端 50Ω 输入)。该检波器的标称输出电压斜率为 20mV/dB，而典型温度系数为 0.01dB/℃ (在 200MHz 频率条件下)。Applications 线性至对数信号电平转换 接收信号强度指示 (RSSI) RF 功率控制 RF/IF 功率检波 接收器 RF/IF 增益控制 • 低频至 1000MHz 操作\n\n• 83dB 动态范围 (在 200MHz 频率条件下具有 ±1dB 非线性)\n\n• -76dBm 或更加优越的灵敏度性能 (在 200MHz 频率条件下)\n\n• 20mV/dB 的对数-线性转换斜率\n\n• 电源电压范围：2.7V 至 5.25V\n\n• 电源电流：13.5mA (在 3V 条件下)\n\n• 纤巧型 8 引脚 (3mm × 2mm) DFN 封装;

Wide Dynamic Range RF/IF Log Detector

文件：307.42 Kbytes Page：16 Pages

800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator

文件：307.33 Kbytes Page：16 Pages

Wide Dynamic Range RF/IF Log Detector

文件：313.06 Kbytes Page：16 Pages

Wide Dynamic Range RF/IF Log Detector

文件：307.42 Kbytes Page：16 Pages

封装/外壳：8-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF DETECT 10MHZ-1GHZ 8DFN RF/IF，射频/中频和 RFID 射频检测器

封装/外壳：8-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF DETECT 10MHZ-1GHZ 8DFN RF/IF，射频/中频和 RFID 射频检测器

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an