1.5A, Low Noise, Negative Linear Regulator with Precision Current Limit

文件：427.2 Kbytes Page：20 Pages

1.5A, Low Noise, Negative Linear Regulator with Precision Current Limit

文件：427.21 Kbytes Page：20 Pages

封装/外壳：TO-263-6，D²Pak（5 引线 + 接片），TO-263BA 包装：管件 描述：IC REG LINEAR -12V 1.5A 5DDPAK 集成电路（IC） 线性 + 开关稳压器

封装/外壳：TO-263-6，D²Pak（5 引线 + 接片），TO-263BA 包装：卷带（TR） 描述：IC REG LINEAR -12V 1.5A 5DDPAK 集成电路（IC） 稳压器 - 线性

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

SANKEN ELECTRIC COMPANY, LTD.

文件：171.27 Kbytes Page：5 Pages