45V VIN, Micropower, Low Noise, 100mA Low Dropout, Linear Regulator

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3A, Fast Transient Response, Low Noise,LDO Regulators

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T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

Integrated Circuit Infrared Preamplifier

Description: The NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV. The amplifier I has a wide dynamic range and thus ensures interference

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34