微功率双通道比较器

LT®1017/LT1018 是通用型微功率比较器。LT1017 专为实现极低的工作功耗而优化，而 LT1018 则以较高的功率和较高的速度运作。这两款器件均可在单节 1.1V 电池至高达 40V 的电压范围内工作。输出级包括一个“B”类上拉电流源，从而免除了增设一个外部阻性上拉元件的需要，并节省了功率。而且，输出级还专为允许驱动与比器件 V+ 更正的电源相连的负载 (就像那些具有集电极开路输出级的比较器所能做的一样) 而设计。 输入规格同样非常出色。片内修整较大限度地减小了偏移电压，而高增益和共模抑制比则把其他与输入相关的误差保持在很低的水平上。共模电压范围包括地电位。特殊电路能够防止出现错 • 最大偏移电压：1mV \n\n• 最大偏置电流：15nA \n\n• 典型输出驱动电流：70mA \n\n• 工作电源电压范围：1.1V 至 40V \n\n• 内部上拉电流 \n\n• 输出能够驱动高于 V+ 的负载 \n\n• 30μA 电源电流 (LT1017)、110μA 电源电流 (LT1018) \n\n• 采用 8 引脚 PDIP、8 引脚塑料 SO 和 16 引脚塑料 SO 封装;

Micropower Dual Comparator

文件：225.21 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：225.21 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

Micropower Dual Comparator

文件：618.55 Kbytes Page：8 Pages

Micropower Dual Comparator

文件：222.12 Kbytes Page：16 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3