ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION The LSP series of Enhanced Performance Surface Mount (EPSM) PIN diodes offers the circuit designer a higher level of quality in a commercially priced package. Choose from LSP1000, LSP1004, and LSP1008 for switching applications, LSP1002, LSP1005, LSP1010 and LSP1011 for low distortion

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PIN Diodes TM

DESCRIPTION The LSP series of Enhanced Performance Surface Mount (EPSM) PIN diodes offers the circuit designer a higher level of quality in a commercially priced package. Choose from LSP1000, LSP1004, and LSP1008 for switching applications, LSP1002, LSP1005, LSP1010 and LSP1011 for low distortion

Surface Mount PIN Diodes

The LSP series of Enhanced Performance Surface Mount (EPSM) PIN diodes offers the circuit designer a higher level of quality in a commercially priced package. Choose from LSP1000 LSP1004 and LSP1008 for switching applications or LSP1002 LSP1005 LSP1010 and LSP1011 for low distortion attenuation from

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp