| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.97664 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MA/COM |
24+ |
NA/ |
970 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
M/A-COM |
2016+ |
LGA10 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MA/COM |
25+ |
LGA10 |
970 |
原装正品,欢迎来电咨询! |
|||
M/A-COM |
2016+ |
LGA10 |
6523 |
只做进口原装现货!假一赔十! |
|||
AM |
23+ |
SMD |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
MA/COM |
21+ |
LGA10 |
970 |
原装现货假一赔十 |
|||
M/A-COM |
2223+ |
LGA10 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
PTC |
24+ |
TSSOP24 |
13718 |
只做原装 公司现货库存 |
|||
AAC |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
AM |
23+ |
SMD |
28000 |
原装正品 |
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