1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V