1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

1 mW 14 Pin DIL Cooled Laser Modules

Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4110 family of frequency synthesizers can be used to implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. They consist of a low noise digital PFD (phase frequency detector), a precision charge pump, a progra

300 MHz to 1000 MHz Quadrature Modulator

GENERAL DESCRIPTION The ADL5370 is the first in the fixed-gain quadrature modulator (F-MOD) family designed for use from 300 MHz to 1000 MHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication sy

Relampable Socket

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SYSDRIVE 3G3HV Series

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true one-port, surface-acoustic-wave (SAW) resonator

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