位置：首页 > IC中文资料第3398页 > LP75
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
0.5 W POWER PHEMT DESCRIPTIONANDAPPLICATIONS TheLP750isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirectwrite0.25mmby750mmSchottkybarriergate.Therecessed“mushroom”gatestructureminim | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors |  |   | |
PACKAGED 0.5 WATT POWER PHEMT DESCRIPTIONANDAPPLICATIONS TheLP750P100isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirect-write0.25mmSchottkybarriergate.Therecessed“mushroom”gatestructureminim | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTIONANDAPPLICATIONS TheLP750SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx750mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed“m | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTIONANDAPPLICATIONS TheLP750SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx750mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed“m | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTIONANDAPPLICATIONS TheLP750SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx750mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed“m | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
ULTRA LOW NOISE PHEMT DESCRIPTIONANDAPPLICATIONS TheLP7512isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirect-write0.25mmby200mmSchottkybarriergate.Therecessed“mushroom”gatestructureminimi | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
PACKAGED ULTRA LOW NOISE PHEMT DESCRIPTIONANDAPPLICATIONS TheLP7512P70isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirect-write0.25mmby200mmSchottkybarriergate.Therecessed“mushroom”Ti/Pt/Aug | FILTRONICFiltronic Compound Semiconductors Filtronic Compound Semiconductors | | | |
PC POWER SUPPLY SUPERVISORS 文件：2.62809 Mbytes Page：12 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | |
LP75产品属性
- 类型
描述
- 型号
LP75
- 制造商
Datak Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FILTRONIC |
2022 |
SOT89 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
FILTRONIC |
22+ |
SOT-89 |
32350 |
原装正品 假一罚十 公司现货 |
|||
FILTRONIC/Filtronic Compound S |
21+ |
SOT89 |
15100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FILTRONIC |
21+ |
SOT89 |
50000 |
全新原装正品现货,支持订货 |
|||
FILTRONIC |
05+ |
SOT89 |
25100 |
全新原装 实单必成 |
|||
只做原装 |
21+ |
SOT89 |
36520 |
一级代理/放心采购 |
|||
FIL |
19+ |
SOT89 |
20000 |
61780 |
|||
FIL |
22+ |
SOT89 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
FILTRONIC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
FILTRON |
2020+ |
SOT-89 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
LP75芯片相关品牌
LP75规格书下载地址
LP75参数引脚图相关
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LP75数据表相关新闻
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2019-4-2LP8358-150毫安，UCap，低压差电源良好电压调节器
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2013-1-19
DdatasheetPDF页码索引
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