256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62E16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 1.65V to 2.2V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL co

256K X 16 BIT LOW VOLTAGE CMOS SRAM

256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62E16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 1.65V to 2.2V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL co

256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62E16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 1.65V to 2.2V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL co

256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62E16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 1.65V to 2.2V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL co

Low Power SRAM

256K X 16 BIT LOW VOLTAGE CMOS SRAM

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