SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP

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RF POWER LDMOS TRANSISTOR

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VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A

VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge Overload Ratings to 125 Amperes. • Low forward voltage, and reverse leakage. • Small size , simple installation.

Silicon Varistor Temperature Compensating Diode

Features: ● High reliability planar chip and glass sealing ● Low IR ● Large PD

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in P600 package ● 6 ampere operation at TA=60 ¢J with no thermal runaway ● Exce

FAST SWITCHING RECOVERY RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● High current capability Fast switching for high efficiency ● The plastic meterial carries U/L recognition 94V-O ● Exceeds environmental standards of MIL-S-19500/228

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Void-free Plastic in P600 package ● 6.0 ampere operation at TA=55 ¢J with no thermal runaway ● Ex